Model for Transient Enhanced Diffusion of Ion-Implanted Boron, Arsenic, and Phosphorous over Wide Range of Process Conditions
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منابع مشابه
Extrinsic transient diffusion in silicon
The effect of extrinsic background doping on the transient enhancement of dopant diffusion for an ion-implanted dopant is investigated to gain insight into the role of point defect charge states. The transient effect is found to be greatly increased for extrinsic background doping of the same type as the implanted ion, and reduced for background doping of the opposite type. Analysis of the rela...
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�001� CZ silicon wafers were implanted with As at 100 keV to a dose of 1�1015/cm2 in order to produce a continuous amorphous layer to a depth of about 120 nm. Furthermore, the implant condition was such that the peak arsenic concentration was below the arsenic clustering threshold. Subsequently, a second As or Ge implant was performed at 30 keV to doses of 2 �1015/cm2, 5�1015/cm2 and 1�1016/cm2...
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تاریخ انتشار 2003